| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reverse blocking insulated gate bipolar transistor which will not degrade in the reverse withstanding voltage of an IGBT direction even when it is broken or cracked by vibration or impact shock in a dicing process or during transport, and a manufacturing method therefor. <P>SOLUTION: A reverse blocking insulated gate bipolar transistor, which includes an active region having a MOS gate structure on the surface side of an n-type semiconductor substrate and a voltage tolerant structure around the active region and comes with a p-type collector layer on the reverse side, is constructed in such a way that a p-type separation layer disposed on the outer periphery of the voltage tolerant structure so as to link the surface side and the reverse side is electrically connected to the p-type collector layer on the reverse side. In the reverse blocking insulated gate bipolar transistor, the width in a direction parallel to the substrate surface in a portion where the p-type separation layer connects to the p-type collector layer on the reverse side is 60 μm or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
