ETCHING METHOD AND DEVICES PRODUCED USING THE ETCHING METHOD

摘要

A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO2) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.