发明名称 |
METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT |
摘要 |
Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor memory element includes, after forming a top electrode of a variable resistance element and at least before forming a top electrode of an MSM diode element, oxidizing to insulate a portion of a variable resistance film in a region around an end face of a variable resistance layer.
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申请公布号 |
US2013015423(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201113637465 |
申请日期 |
2011.11.18 |
申请人 |
PANASONIC CORPORATION;MIKAWA TAKUMI;HAYAKAWA YUKIO;KAWASHIMA YOSHIO;NINOMIYA TAKEKI |
发明人 |
MIKAWA TAKUMI;HAYAKAWA YUKIO;KAWASHIMA YOSHIO;NINOMIYA TAKEKI |
分类号 |
H01L45/00;H01L21/8239 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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