发明名称 |
NON-VOLTOLE MEMORY CELL AND METHODS FOR PROGRAMMING, ERASING AND READING THEREOF |
摘要 |
A non-volatile memory cell and methods for programming, erasing and reading thereof are provided. A non-volatile memory cell includes a substrate having a first conductive type. A first transistor, a second transistor and a select transistor having a second conductive type are disposed in the substrate, wherein a first gate of the first transistor is coupled to a second gate of the second transistor. A source region of the first transistor is coupled to a bit line. A drain region of the second transistor and a gate of the select transistor are coupled to a select gate line. A drain region of the first transistor is coupled to a source region of the select transistor. A drain region of the select transistor is coupled to a select line. A bit is stored in the first and second gates by controlling the bit line and the select gate line. A bit stored in the first and second gates is erased by controlling the bit line and the select gate line.
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申请公布号 |
US2013016567(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201113183937 |
申请日期 |
2011.07.15 |
申请人 |
CHANG CHIA-CHUAN;CHEN WEI-SUNG;WU CHUNG-HO |
发明人 |
CHANG CHIA-CHUAN;CHEN WEI-SUNG;WU CHUNG-HO |
分类号 |
G11C16/04;G11C16/10 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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