METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON
摘要
<p>Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays</p>
申请公布号
WO2013009433(A1)
申请公布日期
2013.01.17
申请号
WO2012US42713
申请日期
2012.06.15
申请人
SOLAR-TECTIC LLC;TRUSTEES OF DARMOUTH COLLEGE;LIU, JIFENG;CHAUDHARI, ASHOK;CHAUDHARI, KARIN;CHAUDHARI, PIA