| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the power consumption and the operation delay in a semiconductor integrated circuit. <P>SOLUTION: In each of a plurality of sequential circuits included in a storage circuit, a transistor in which a channel formation region is configured by an oxide semiconductor and a capacitive element are provided. In the capacitive element, a node having one electrode being electrically connected becomes a floating state by the transistor being in an off-state. By configuring the channel formation region of the transistor by the oxide semiconductor, the transistor having extremely low off-current (leakage current) can be achieved. Thus, a potential of the node of the capacitive element having the one electrode being electrically connected can be constant or substantially constant in a period in which a power-supply voltage is not supplied to the storage circuit by making the transistor into the off-state in the period. As a result, the problem described above can be solved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
