发明名称 |
MULTIPLE ORIENTATION NANOWIRES WITH GATE STACK SENSORS |
摘要 |
An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.
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申请公布号 |
US2013015507(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213593659 |
申请日期 |
2012.08.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHIDAMBARRAO DURESETI;LIU XIAO HU;SEKARIC LIDIJA |
发明人 |
CHIDAMBARRAO DURESETI;LIU XIAO HU;SEKARIC LIDIJA |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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