POLY a-AMINO ACID AND FERROELECTRIC MEMORY ELEMENT USING SAME

摘要

Provided are a poly a-amino acid having good film-producing capability, and a ferromagnetic memory element having excellent moldability and workability and further, excellent operating stability when exposed to high temperatures. The ferromagnetic memory element comprises a poly a-amino acid that is a copolymer formed from glutamic acid-?-ester units represented by formula (I) (I) (where R1 is an optionally substituted C1-8 alkyl group or benzyl group optionally substituted by a halogen atom, alkoxy group or nitro group) and glutamic acid-?-ester units represented by formula (II) (II) (where R2 is not the same as R1 and is an unsubstituted C3-16 alkyl group or C1-6 alkyl group wherein a portion or all of the hydrogen atoms are optionally substituted by halogen atoms, C3-12 acyclic hydrocarbon groups, C1-6 alkoxy groups, cyano groups, phenyl groups (where a portion or all of the hydrogen atoms are optionally substituted by halogen atoms or alkoxy groups), phenyl alkoxy groups (where a portion or all of the hydrogen atoms are optionally substituted by halogen atoms or alkoxy groups), or phenyl alkyl carbamate groups (where a portion or all of the hydrogen atoms are optionally substituted by halogen atoms or alkoxy groups)) and has a ratio of units represented by formula (I) and units represented by formula (II) ((I)/(II)) that is between 10/90 and 90/10 by molar ratio.