| 摘要 |
<p>A capacitor structure of a semiconductor device is provided to prevent mismatching by rapidly supplying a current to each of layers. A plurality of first metal elements(110) are connected to a via(112) along a vertical direction. A plurality of second metal elements and the first metal elements are alternately arranged along a horizontal direction and are connected to a via along a vertical direction. A dielectric(130) is formed between the first and second metal elements. An extension(114) is extended from one end of each of the first metal elements. An extension(124) is extended from one end of each of the second metal elements. The extensions are connected to branch parts(210,220) for supplying current to each of layers and grounding each of layers.</p> |
