发明名称 |
METHOD AND SYSTEM FOR FORMING LOW CONTACT RESISTANCE DEVICE |
摘要 |
A method of treating a CMOS device. The method may include providing a first stress liner on a transistor of a first dopant type in the CMOS device. The method may further include exposing the CMOS device to first ions in a first exposure, the first ions configured to reduce contact resistance in a source/drain region of a transistor of a second dopant type.
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申请公布号 |
US2013015528(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201113181175 |
申请日期 |
2011.07.12 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;WAITE ANDREW;EROKHIN YURI;TODOROV STANISLAV |
发明人 |
WAITE ANDREW;EROKHIN YURI;TODOROV STANISLAV |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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