发明名称 |
METHOD OF INSPECTING MASK, MASK INSPECTION DEVICE, AND METHOD OF MANUFACTURING MASK |
摘要 |
There is provided a method of high-sensitively detecting both of a phase defect existing in a mask blank and a phase defect remaining after manufacturing an EUVL mask. When the mask blank is inspected, EUV light having illumination NA to be within an inner NA but a larger value is irradiated. When the EUVL mask is inspected, by using a dark-field imaging optical system including a center shielding portion for shielding EUV light and a linear shielding portion for shielding the EUV light whose width is smaller than a diameter of the center shielding portion, the center shielding portion and the linear shielding portion being included in a pupil plane, the EUV light having illumination NA as large as or smaller than the width of the linear shielding portion is irradiated.
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申请公布号 |
US2013017475(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213549482 |
申请日期 |
2012.07.15 |
申请人 |
RENESAS ELECTRONICS CORPORATION;TERASAWA TSUNEO;SUGA OSAMU |
发明人 |
TERASAWA TSUNEO;SUGA OSAMU |
分类号 |
G03F1/22;G01N21/95 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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