发明名称 |
METHOD OF FORMING A PHASE CHANGE MATERIAL LAYER PATTERN AND METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE |
摘要 |
A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening. |
申请公布号 |
US2013017663(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213543905 |
申请日期 |
2012.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK JEONG-HEE;PARK SOON-OH;PARK JUNG-HWAN;OH JIN-HO |
发明人 |
PARK JEONG-HEE;PARK SOON-OH;PARK JUNG-HWAN;OH JIN-HO |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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