| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor using an oxide semiconductor which solves a problem of difficulty in causing oxygen atoms to sufficiently and uniformly diffuse in the oxide semiconductor. <P>SOLUTION: A semiconductor device comprises: a gate electrode; a gate insulation film arranged so as to cover one surface of the gate electrode; an oxide semiconductor arranged on the gate insulation film in an overlapping manner; a source electrode and a drain electrode arranged on the oxide semiconductor in an overlapping manner; and an oxygen atom containing film arranged between the source electrode and drain electrode, and the gate insulation film layer so as to contact the oxide semiconductor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
