| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can be simply manufactured without requiring alignment accuracy; ensure a wide contact area with a channel region; and develop characteristics such as a threshold voltage, as designed. <P>SOLUTION: A manufacturing method of a trench gate MOS transistor 1 comprises: forming a curved part 13 at an opening end of a gate trench 3 such that an opening width of the gate trench 3 grows wider in a trumpet shape; embedding an embedding insulation film 24 in the curved part 13; and forming a contact trench 4 in a self-alignment manner with respect to the curved part 13 of the gate trench 13 by etching an Si epitaxial layer 8 by using the embedding insulation film 24 as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
