CIRCUIT FOR DRIVING POWER MOSFET, AND ELEMENT VALUE DECISION METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a circuit for driving a power MOSFET and an element value decision method therefor which prevent the occurrence of a self turn-on due to a voltage attributable to a time change in a current flowing through a parasitic inductance even when driving the power MOSFET at a high speed.

SOLUTION: A control circuit controls switch drive via drive circuits to turn on switches S2H and S2L and turn off the others in (2) interval and turn on switches S1L and S3H and turn off the others in (3) interval. A gate-source path of a high side MOSFET can thus be switched to a predetermined impedance during (2)-(3) interval, so that a gate-source voltage Vgs1 of the high side MOSFET can be held below a threshold voltage Vt even in the latter half of recovery.

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