发明名称 FLASH MEMORY DEVICE AND METHOD PERFORMING ERASE OPERATION USING OVER PROGRAM
摘要 A flash memory device performs an erase operation by execution of an over program. device. In response to an erase request directed to requested page data a logical page address is converted to a corresponding physical page address, an over program data pattern for an over program operation is generated, and the over program operation is executed using the PPA to change a threshold voltage distribution for at least one memory cell of the requested page data in accordance with the over program data pattern.
申请公布号 US2013019054(A1) 申请公布日期 2013.01.17
申请号 US201213466429 申请日期 2012.05.08
申请人 SAMSUNG ELECTRONICS CO., LTD.;JUNG YOUNG-WOO;KIM HWAN-CHUNG;SHIN HEE-TAK;AHN CHUN-SOO;JUNG JIN-WOO 发明人 JUNG YOUNG-WOO;KIM HWAN-CHUNG;SHIN HEE-TAK;AHN CHUN-SOO;JUNG JIN-WOO
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
主权项
地址