发明名称 |
FLASH MEMORY DEVICE AND METHOD PERFORMING ERASE OPERATION USING OVER PROGRAM |
摘要 |
A flash memory device performs an erase operation by execution of an over program. device. In response to an erase request directed to requested page data a logical page address is converted to a corresponding physical page address, an over program data pattern for an over program operation is generated, and the over program operation is executed using the PPA to change a threshold voltage distribution for at least one memory cell of the requested page data in accordance with the over program data pattern. |
申请公布号 |
US2013019054(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213466429 |
申请日期 |
2012.05.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;JUNG YOUNG-WOO;KIM HWAN-CHUNG;SHIN HEE-TAK;AHN CHUN-SOO;JUNG JIN-WOO |
发明人 |
JUNG YOUNG-WOO;KIM HWAN-CHUNG;SHIN HEE-TAK;AHN CHUN-SOO;JUNG JIN-WOO |
分类号 |
G06F12/00 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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