SEMICONDUCTOR INTEGRATED CIRCUIT AND MODULE MOUNTING SAME

摘要

The purpose of the present invention is to eliminate a placement direction restriction for amplifier elements on a semiconductor chip surface. A first final-stage amplifier element (Q3) of a first RF power amplifier (100) is formed on the surface of a semiconductor chip and along a first edge thereof, and a second final-stage amplifier element (Q2) of a second RF power amplifier (500) is formed along a second edge perpendicular to the first edge. The first and second final-stage elements (Q3 and Q2) are configured from multiple unit transistors. The multiple unit transistors contain active regions (G) having rectangular planar geometry. The extension direction of the longer edges of multiple rectangles in multiple unit transistors of the first and second final-stage elements (Q3 and Q2) is set in the length direction of the second edge. The direction of iterative enlargement for multiple unit transistors in the first final-stage element (Q3) is set in the length direction of the first edge, and the direction of iterative enlargement for multiple unit transistors in the second final-stage element (Q2) is set in the length direction of the second edge.