<p>A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.</p>
申请公布号
WO2013009316(A1)
申请公布日期
2013.01.17
申请号
WO2011US44024
申请日期
2011.07.14
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;YANG, JIANHUA;ZHANG, MINXIAN MAX;MIAO, FENG