| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an equipment of laser spike annealing employing a plurality of light sources. SOLUTION: A semiconductor wafer is preheated before it is laser annealed by introducing converged energy from a first energy source to a local region of the wafer. High output laser light from a second energy source is introduced onto a preheated local region, and the temperature is raised furthermore for annealing. The first energy source can emit laser light, white light, an electron beam, gamma ray radiation, or other type of converged energy, and a local region of the wafer is preheated before it is irradiated with high output laser light for annealing. COPYRIGHT: (C)2008,JPO&INPIT
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