| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning composition, along with a cleaning method of a semiconductor substrate using the same and a manufacturing method of a semiconductor device including the cleaning method, which can remove impurities such as residual abrasive grain, residual polishing chips, and metal ion on a metal wiring and a low-dielectricity insulating film, with no corrosion of metal wirings, with no degradation in electric characteristics of the low-dielectricity insulating film, and with no mechanical damage on the low-dielectricity insulating film when contaminant on a substrate surface is removed after chemical and mechanical polishing of a semiconductor substrate comprising metal wirings and low-dielectricity insulating film. SOLUTION: The composition for cleaning is used after chemical and mechanical polishing, and has a structure of cross linkage. It contains organic polymer particles (A) and complexing agent (B) whose average dispersion particle size is 10 nm to less than 100 nm. COPYRIGHT: (C)2008,JPO&INPIT
|
