MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of realizing activation of impurities in a source region and a drain region by heat treatment at a relatively low temperature, and stably obtaining a high-performance P-type thin film transistor. SOLUTION: The method of manufacturing the semiconductor device includes a patterning step of patterning a semiconductor film in a polycrystalline or approximately monocrystalline state formed on a substrate (11) to form a transistor region (133), a gate electrode forming step of forming a gate insulation film (14) and a gate electrode (15) on the transistor region, an impurity introducing step of introducing impurities from the gate insulation film and the gate electrode into the source region and the drain region, and an activation step of electrically activating the impurities in the source region and the drain region by applying heat treatment to the source and drain regions into which the impurities are introduced. During the impurity introducing step, boron is injected into the source and drain regions with a concentration of 4.5×1015/cm2or more. COPYRIGHT: (C)2008,JPO&INPIT