| 摘要 |
A circuit for generating an internal voltage of a semiconductor memory is provided to control response speed according to an internal voltage when the semiconductor memory enters a power down mode. An internal voltage sensing unit(100) receives a first voltage and a second voltage for enabling as a control signal selectively in response to a power down mode signal and generates a sensing signal by comparing a reference voltage with an internal voltage. An internal voltage generation unit(20) generates the internal voltage in response to the sensing signal. The internal voltage sensing unit includes a control signal generation part and a comparator. The internal voltage generation unit outputs the control signal with the first voltage level or the second voltage level selectively in response to the power down mode signal. The comparator controls operation speed of comparing the reference voltage with the internal voltage according to the potential level of the control signal.
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