发明名称 ALIGNMENT MARKS TO ENABLE 3D INTEGRATION
摘要 A method of forming alignment marks in three dimensional (3D) structures and corresponding structures are disclosed. The method includes forming apertures (126) in a first surface of a first semiconductor substrate; joining the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate (116); and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark.
申请公布号 WO2012096909(A3) 申请公布日期 2013.01.17
申请号 WO2012US20704 申请日期 2012.01.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;FAROOQ, MUKTA, G;GRAVES-ABE, TROY, L.;HANNON, ROBERT;KINSER, EMILY, R;LANDERS, WILLIAM, F;PETRARCA, KEVIN, S;VOLANT, RICHARD, P;WINSTEL, KEVIN, R. 发明人 FAROOQ, MUKTA, G;GRAVES-ABE, TROY, L.;HANNON, ROBERT;KINSER, EMILY, R;LANDERS, WILLIAM, F;PETRARCA, KEVIN, S;VOLANT, RICHARD, P;WINSTEL, KEVIN, R.
分类号 H01L21/027 主分类号 H01L21/027
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