发明名称 SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a high channel mobility by bringing the side surface of a trench, in which a channel is formed, close to the (11-20) plane or the (1-100) plane capable of increasing the channel mobility. <P>SOLUTION: An n<SP POS="POST">+</SP>source region 5 is formed so as to come into contact with one side surface out of both side surfaces of a trench 7, i.e. the side surface which forms an angle of 90&deg; or an angle close to it with respect to the (0001) plane, so that a channel is formed in only one of both side surfaces of the trench 7. Since the channel can be formed only in the side surface where a high channel mobility is formed out of both side surfaces of the trench 7, a high channel mobility can be obtained. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013012590(A) 申请公布日期 2013.01.17
申请号 JP20110144320 申请日期 2011.06.29
申请人 DENSO CORP;TOYOTA MOTOR CORP;TOYOTA CENTRAL R&D LABS INC 发明人 MIYAHARA SHINICHIRO;TAKATANI HIDESHI;SUGIMOTO MASAHIRO;WATANABE YUKIHIKO;SOEJIMA SHIGEMASA;ISHIKAWA TAKESHI
分类号 H01L29/78;H01L21/336;H01L29/12 主分类号 H01L29/78
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