发明名称 |
LITHOGRAPHIC PATTERNING PROCESS AND RESISTS TO USE THEREIN |
摘要 |
<p>A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.</p> |
申请公布号 |
WO2013007442(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
WO2012EP60133 |
申请日期 |
2012.05.30 |
申请人 |
ASML NETHERLANDS B.V.;WUISTER, SANDER;YAKUNIN, ANDREI;KRIVTSUN, VLADIMIR |
发明人 |
WUISTER, SANDER;YAKUNIN, ANDREI;KRIVTSUN, VLADIMIR |
分类号 |
G03F7/004;C08F30/08;G03F7/075 |
主分类号 |
G03F7/004 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|