发明名称 DEVICES WITH NANOCRYSTALS AND METHODS OF FORMATION
摘要 Devices can be fabricated using a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites can be created on a surface of the substrate. The creation of the nucleation sites may include implanting ions with an energy and a dose selected to provide a controllable distribution of the nucleation sites across the surface of the substrate. Nanoscale structures may be grown using the controllable distribution of nucleation sites to seed the growth of the nanoscale structures. According to various embodiments, the nanoscale structures may include at least one of nanocrystals, nanowires, or nanotubes. According to various nanocrystal embodiments, the nanocrystals can be positioned within a gate stack and function as a floating gate for a nonvolatile device. Other embodiments are provided herein.
申请公布号 US2013017655(A1) 申请公布日期 2013.01.17
申请号 US201213614794 申请日期 2012.09.13
申请人 MICRON TECHNOLOGY, INC.;SANDHU GURTEJ S.;DURCAN D. MARK 发明人 SANDHU GURTEJ S.;DURCAN D. MARK
分类号 H01L21/336;B82Y40/00;H01L21/8239 主分类号 H01L21/336
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