发明名称 |
DEVICES WITH NANOCRYSTALS AND METHODS OF FORMATION |
摘要 |
Devices can be fabricated using a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites can be created on a surface of the substrate. The creation of the nucleation sites may include implanting ions with an energy and a dose selected to provide a controllable distribution of the nucleation sites across the surface of the substrate. Nanoscale structures may be grown using the controllable distribution of nucleation sites to seed the growth of the nanoscale structures. According to various embodiments, the nanoscale structures may include at least one of nanocrystals, nanowires, or nanotubes. According to various nanocrystal embodiments, the nanocrystals can be positioned within a gate stack and function as a floating gate for a nonvolatile device. Other embodiments are provided herein. |
申请公布号 |
US2013017655(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213614794 |
申请日期 |
2012.09.13 |
申请人 |
MICRON TECHNOLOGY, INC.;SANDHU GURTEJ S.;DURCAN D. MARK |
发明人 |
SANDHU GURTEJ S.;DURCAN D. MARK |
分类号 |
H01L21/336;B82Y40/00;H01L21/8239 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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