| 摘要 |
There are provided a heat treatment apparatus and a method of processing a substrate, which can control uniformity in thickness of a film formed on a substrate. The heat treatment apparatus includes a processing chamber configured to process a substrate; a heating device configured to heat the substrate from a circumferential side of the substrate accommodated in the processing chamber; a cooling gas channel installed between the heating device and the processing chamber; a cooling device configured to flow a cooling gas into the cooling gas channel; a plurality of cooling gas inhalation passages configured to independently communicate with the cooling gas channel in regions into which the heating device is horizontally divided, and installed between the cooling device and the cooling gas channel; first pressure detectors installed respectively in the plurality of cooling gas inhalation passages; and a control unit configured to control the cooling device based on a first pressure value detected by the first pressure detectors. |
