发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem that when a member, having a different heat expansion coefficient from a member forming a power semiconductor module, is joined to the member forming the power semiconductor module by soldering, a crack is caused in solder by shear stress acting on the solder due to temperature rise to increase heat resistance and result in the removal and cracks of a terminal. <P>SOLUTION: An internal component is formed by sandwiching a semiconductor chip with electrode materials and insulation materials, and thin plates, provided with protruding parts and having plate spring characteristics, are provided on upper and lower surfaces of the internal component. The thin plates and side surfaces of the internal component are covered by a case, and a groove for circulation, communicating with an inlet and an outlet of a cooling medium, is provided at the inner surface side of each cooling block. Each cooling block is integrally formed with the internal component with the groove side facing the protruding part side of the thin plate to form a power semiconductor module. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013012641(A) 申请公布日期 2013.01.17
申请号 JP20110145350 申请日期 2011.06.30
申请人 MEIDENSHA CORP 发明人 NISHIGUCHI TETSUYA;YAMADA SHINICHI;MORIKAWA YOSHIKI;MIURA TOSHINORI;NOYORI TSUYOSHI
分类号 H01L23/34;H01L23/473 主分类号 H01L23/34
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