| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can appropriately protect a GaN-based transistor with a simple structure. <P>SOLUTION: A gate electrode 110g and a protective diode electrode 115p are connected with each other. An insulation film 113 flows, when a voltage at a predetermined value and over is applied to the gate electrode 110g, a leakage current between the protective diode electrode 115p, and an electron transit layer 104 and an electron supply layer 103. The predetermined value is higher than a voltage at which a HEMT performs an ON operation and lower than a breakdown voltage of a gate insulation film 109g. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013012692(A) |
申请公布日期 |
2013.01.17 |
| 申请号 |
JP20110146081 |
申请日期 |
2011.06.30 |
| 申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
AKIYAMA SHINICHI;KOTANI YOSHIYUKI;WAKABAYASHI TOSHIHIRO;MIYAMOTO MASATO |
| 分类号 |
H01L21/337;H01L21/338;H01L21/822;H01L21/8232;H01L27/04;H01L27/06;H01L27/095;H01L29/778;H01L29/808;H01L29/812;H01L29/861;H01L29/868 |
主分类号 |
H01L21/337 |
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