| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image pickup device and a solid-state image pickup device manufacturing method, which can improve element isolation characteristics. <P>SOLUTION: A solid-state image pickup device manufacturing method according to an embodiment comprises an element isolation region formation process and a charge storage region formation process. In the element isolation region formation process, an element isolation region isolating photoelectric conversion elements from each other is formed by epitaxial growth of a first conductivity type semiconductor layer. In the charge storage region formation process, a charge storage region in the photoelectric conversion element is formed by epitaxial growth of a second conductivity type semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
