发明名称 PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME, PIEZOELECTRIC FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC FILM DEVICE
摘要 There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦̸x≦̸1, 0≦̸y≦̸1, 0≦̸z≦̸0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
申请公布号 US2013015392(A1) 申请公布日期 2013.01.17
申请号 US201213532081 申请日期 2012.06.25
申请人 HITACHI CABLE, LTD.;SUENAGA KAZUFUMI;SHIBATA KENJI;WATANABE KAZUTOSHI;NOMOTO AKIRA;HORIKIRI FUMIMASA 发明人 SUENAGA KAZUFUMI;SHIBATA KENJI;WATANABE KAZUTOSHI;NOMOTO AKIRA;HORIKIRI FUMIMASA
分类号 H01L41/187;H01L41/04;H01L41/047;H01L41/22 主分类号 H01L41/187
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