| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent decrease in power efficiency of a nitride semiconductor light-emitting element at a time of a large current drive. <P>SOLUTION: A nitride semiconductor light-emitting element comprises: a first conductivity type nitride semiconductor layer; a superlattice layer provided on the first conductivity type nitride semiconductor layer; an active layer provided on the superlattice layer; and a second conductivity type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
