| 摘要 |
The invention provides a transistor, a semiconductor device and a method for manufacturing the same. The method for manufacturing a transistor comprises: defining an active area on a semiconductor substrate, forming a dummy gate stack on the active area, primary spacers surrounding said dummy gate stack, and an insulating layer surrounding said primary spacers, and forming source/drain regions embedded in said active area; removing the dummy gate in said dummy gate stack to form a first recessed portion surrounded by the primary spacers; filling Cu simultaneously in said first recessed portion and in the source/drain contact holes penetrating said insulating layer to form a gate and source/drain contacts. By filling the gate and the source/drain contact holes with the metal Cu simultaneously in the Gate Last structure, the gate serial resistance and the source/drain contact holes resistance in the Gate Last process are decreased. Besides, the effect of metal filling is improved in small scale, and the process complexity and difficulty is efficiently decreased.
|
