POWER SEMICONDUCTOR MODULE

摘要

Provided is a power semiconductor module, which suppresses a temperature increase of a wide band gap semiconductor element, suppresses an increase of the total chip area of the wide band gap semiconductor element, and can be manufactured at low cost, in the case of disposing a Si semiconductor element and the wide band gap semiconductor element in a same power semiconductor module. Switching elements (4) composed of Si are disposed in a center region of a power semiconductor module (100), and diode elements (5) composed of SiC are disposed on both the sides of the center region of the power semiconductor module (100) or on a peripheral section that surrounds the center region.