发明名称 |
COMPOSITION FOR FORMING FINE PATTERN AND METHOD FOR FORMING FINED PATTERN USING SAME |
摘要 |
[Problem] To provide a composition for fine pattern formation which can form a resist pattern having high etching resistance and a method for forming a resist pattern using the composition. [Solution] A composition for fine pattern formation which comprises both a water-soluble resin having an aromatic-containing substituent as a side chain and pure water. This composition contains acid groups bonded to the water-soluble resin or contains a free acid therein. |
申请公布号 |
WO2013008912(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
WO2012JP67926 |
申请日期 |
2012.07.13 |
申请人 |
AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP.;OKAMURA TOSHIYA;PAWLOWSKI GEORG;ISHII MASAHIRO |
发明人 |
OKAMURA TOSHIYA;PAWLOWSKI GEORG;ISHII MASAHIRO |
分类号 |
G03F7/40;C08F226/02;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|