发明名称 COMPOSITION FOR FORMING FINE PATTERN AND METHOD FOR FORMING FINED PATTERN USING SAME
摘要 [Problem] To provide a composition for fine pattern formation which can form a resist pattern having high etching resistance and a method for forming a resist pattern using the composition. [Solution] A composition for fine pattern formation which comprises both a water-soluble resin having an aromatic-containing substituent as a side chain and pure water. This composition contains acid groups bonded to the water-soluble resin or contains a free acid therein.
申请公布号 WO2013008912(A1) 申请公布日期 2013.01.17
申请号 WO2012JP67926 申请日期 2012.07.13
申请人 AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP.;OKAMURA TOSHIYA;PAWLOWSKI GEORG;ISHII MASAHIRO 发明人 OKAMURA TOSHIYA;PAWLOWSKI GEORG;ISHII MASAHIRO
分类号 G03F7/40;C08F226/02;H01L21/027 主分类号 G03F7/40
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