<p>The present invention fabricates a rectifier device in which current collapse is reduced. A rectifier device (100) provided with: a semiconductor layer laminate having a first nitride semiconductor layer (109) formed on the main surface of a substrate (107), a second nitride semiconductor layer (110) formed on the first nitride semiconductor layer (109) and having a larger band gap than the first nitride semiconductor layer (109), and a channel in which electrons travel in the direction that is parallel to the main surface of the substrate (107); an anode electrode (102a) formed on the semiconductor layer laminate and coming into Schottky contact with the semiconductor layer laminate; a plurality of cathode electrodes (103a) formed on the semiconductor layer laminate with a predetermined distance from the anode electrode (102a) and coming into ohmic contact with the semiconductor layer laminate; and a substrate electrode (lead frame (112)) formed on the rear surface of the substrate (107). The substrate electrode is grounded to a potential of 0V or more.</p>
