| 摘要 |
A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition C<SUB>x</SUB>H<SUB>y </SUB>on the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably C<SUB>2</SUB>H<SUB>4 </SUB>or (CH<SUB>3</SUB>)<SUB>2</SUB>CHC<SUB>6</SUB>H<SUB>6</SUB>CH<SUB>3</SUB>, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has a carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.
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