发明名称 |
Method for manufacturing a superjunction device with wide mesas |
摘要 |
A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly implanting a dopant of a second conductivity into the second sidewall. The at least one mesa is converted to a pillar by diffusing the dopants into the at least one mesa. The pillar is then converted to a column by angularly implanting a dopant of the first conductivity into a first sidewall of the pillar, and by angularly implanting the dopant of the first conductivity type into a second sidewall of the pillar. The dopants are then diffused into the pillar to provide a P-N junction of the first and second doped regions located along the depth direction of the adjoining trench. Finally, the trenches are filled with an insulating material.
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申请公布号 |
US7364994(B2) |
申请公布日期 |
2008.04.29 |
申请号 |
US20060420490 |
申请日期 |
2006.05.26 |
申请人 |
THIRD DIMENSION (3D) SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;SO KOON CHONG;PRATT BRIAN D. |
分类号 |
H01L21/425;H01L21/265;H01L21/329;H01L21/332;H01L21/336;H01L21/44;H01L23/58;H01L29/06;H01L29/76;H01L29/78;H01L29/872;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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