| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a gallium nitride substrate accepted as a result of evaluation by a method capable of evaluating strain easily in a short time, even when processing strain exists in only a specific partial region; a light emitting element or a field effect transistor containing the gallium nitride substrate; and a method for producing an epitaxial film capable of growing a crystal on the gallium substrate. <P>SOLUTION: According to one embodiment of this invention, in the gallium nitride substrate 1, the minimum value of photoluminescence peak intensity in the whole measuring regions 2 is ≥45% of the mean value, when photoluminescence peak intensity of a wavelength corresponding to a band gap of the gallium nitride substrate 1 is measured in each measuring region 2 of a square of 1 mm×1 mm in a measuring range 3 on the surface of the gallium nitride substrate 1, wherein the measuring regions 2 continue with no gap in the measuring range 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
