This application relates to graphene based heterostructures and transistor devices comprising graphene. The heterostructures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
申请公布号
WO2012127244(A3)
申请公布日期
2013.01.17
申请号
WO2012GB50641
申请日期
2012.03.22
申请人
THE UNIVERSITY OF MANCHESTER;GEIM, A K;NOVOSELOV, K S;GORBACHEV, R V;PONOMARENKO, L A;BRITNELL, L
发明人
GEIM, A K;NOVOSELOV, K S;GORBACHEV, R V;PONOMARENKO, L A;BRITNELL, L