发明名称 DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOTION
摘要 A data storage device using magnetic domain wall motion is provided to prevent current leakage at connections between magnetic layers when current is applied to move a magnetic domain wall, thereby suppressing reduction in current density at the connection between magnetic layers. A data storage device using magnetic domain wall motion comprises a first magnetic layer(21a), a second magnetic layer(21b), a connection layer(23), and a resistive magnetic layer(201,202). The first magnetic layer comprises a plurality of magnetic domains. The second magnetic layer is formed on the first magnetic layer. The connection layer is formed between the first and second magnetic layers. The resistive layer is formed between the first and second magnetic layers, and the connection layer.
申请公布号 KR20080045511(A) 申请公布日期 2008.05.23
申请号 KR20060114717 申请日期 2006.11.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SUNG CHUL;CHOA, SUNG HOON;KIM, KWANG SEOK
分类号 G11B5/66;G11B5/64;G11B5/74;G11B5/82 主分类号 G11B5/66
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