| 摘要 |
A semiconductor junction barrier Schottky (JBS-SKY) diode with enforced upper contact structure (EUCS) is disclosed. Referencing an X-Y-Z coordinate, the JBS-SKY diode has semiconductor substrate (SCST) parallel to X-Y plane. Active device zone (ACDZ) atop SCST and having a JBS-SKY diode with Z-direction current flow. Peripheral guarding zone (PRGZ) atop SCST and surrounding the ACDZ. The ACDZ has active lower semiconductor structure (ALSS) and enforced active upper contact structure (EUCS) atop ALSS. The EUC has top contact metal (TPCM) extending downwards and in electrical conduction with bottom of EUCS; and embedded bottom supporting structure (EBSS) inside TPCM and made of a hard material, the EBSS extending downwards till bottom of the EUCS. Upon encountering bonding force onto TPCM during packaging of the JBS-SKY diode, the EBSS enforces the EUCS against an otherwise potential micro cracking of the TPCM degrading the leakage current of the JBS-SKY diode.
|
