发明名称 |
THREE DIMENSIONAL FET DEVICES HAVING DIFFERENT DEVICE WIDTHS |
摘要 |
A three dimensional FET device structure which includes a plurality of three dimensional FET devices. Each of the three dimensional FET devices include an insulating base, a three dimensional fin oriented perpendicular to the insulating base, a gate dielectric wrapped around the three dimensional fin and a gate wrapped around the gate dielectric and extending perpendicularly to the three dimensional fin, the three dimensional fin having a device width being defined as the circumference of the three dimensional fin in contact with the gate dielectric. At least a first of the three dimensional FET devices has a first device width while at least a second of the three dimensional FET devices has a second device width. The first device width is different than the second device width. Also included is a method of making the three dimensional FET device structure.
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申请公布号 |
US2013015534(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201113184537 |
申请日期 |
2011.07.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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