发明名称 |
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH |
摘要 |
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
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申请公布号 |
US2013015492(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213605791 |
申请日期 |
2012.09.06 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;HASHIMOTO TADAO;SATO HITOSHI;NAKAMURA SHUJI |
发明人 |
HASHIMOTO TADAO;SATO HITOSHI;NAKAMURA SHUJI |
分类号 |
H01L33/32;H01L21/20;H01L29/20;H01L33/16 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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