METHOD FOR MANUFACTURING DIODE, AND DIODE

摘要

A semiconductor substrate having a first side and a second side made of single crystal silicon carbide is prepared. A mask layer having a plurality of openings and made of silicon oxide is formed on the second side. The plurality of openings expose a plurality of regions included in the second side, respectively. A plurality of diamond portions are formed by epitaxial growth on the plurality of regions, respectively. The epitaxial growth is stopped before the plurality of diamond portions come into contact with each other. A Schottky electrode is formed on each of the plurality of diamond portions. An ohmic electrode is formed on the first side.