发明名称 |
NANOSTRUCTURED LIGHT-EMITTING DEVICE |
摘要 |
A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer. |
申请公布号 |
US2013015477(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213370996 |
申请日期 |
2012.02.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM JOO-SUNG;KIM TAEK;YANG MOON-SEUNG |
发明人 |
KIM JOO-SUNG;KIM TAEK;YANG MOON-SEUNG |
分类号 |
H01L33/40;B82Y99/00 |
主分类号 |
H01L33/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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