Method for forming a structure with a suspended membrane and a buried electrode

摘要

The device has an intermediate substrate (100) including a movable mass (120), and a support substrate (200) including a lower electrode (102) defined in a bottom electrode layer, and a dielectric layer (101) placed between the substrates. A portion of the dielectric layer is removed to form a cavity in the movable mass, where the bottom of the cavity is constituted by an upper surface of a portion of the lower electrode facing a portion of the movable mass. The intermediate substrate includes a through via (111) filled with a conductive material in contact with the lower electrode. The intermediate substrate is made of a semiconductor material such as silicon or silicon germanium (SiGe) or silicon carbide (SiC) or silicon-germanium-carbon (SiGeC) or gallium arsenide (GaAs) or germanium (Ge). An independent claim is also included for a method for making a microsystem and/or nanosystem type device.