HIGH FREQUENCY CIRCUIT COMPRISING GRAPHENE AND OPERATING METHOD THEREOF
摘要
PURPOSE: A high frequency circuit adopting graphene and a driving method thereof are provided to minimize an electric loss due to an insulation layer in a high frequency domain by forming a via or trench on the lower side of a graphene interconnection part in a high frequency circuit. CONSTITUTION: A graphene interconnection part connects a first electronic device and a second electronic device and transmits a current at a frequency of 1 to 800MHz. A trench or via is formed on the lower side of the graphene interconnection part. The first electronic device transmits an electric signal to the second electronic device through the graphene interconnection part in a high frequency domain. The trench has a depth of 1 to 10000 nm.
申请公布号
KR20130006121(A)
申请公布日期
2013.01.16
申请号
KR20110067971
申请日期
2011.07.08
申请人
SAMSUNG ELECTRONICS CO., LTD.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
SHIN, HYEON JIN;CHOI, JAE YOUNG;JUN, SEONG CHAN;KIM, WHAN KYUN;YOON, HYUNG SEO;OH, JU YEONG;LIM, JU HWAN