| 摘要 |
<p>A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The plurality of barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer, the first barrier layer having a first band gap, a second barrier layer adjacent to the first barrier, the second barrier layer having a third band gap, and at least one third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The plurality of well layers comprise a first well layer between the first barrier layer and the second barrier layer, the first well layer having a second band gap, and a second well layer between the second barrier layer and the at least one third barrier layer. The second barrier layer is disposed between the first well layer and the second well layer, and the third band gap is narrower than the first band gap and wider than the second band gap.</p> |
