METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to cure the dangling bond of the gate insulation pattern by thermal-treating the gate structure including the gate insulation pattern. A manufacturing method of a semiconductor device comprises a step for forming a gate structure(110) on a substrate(100); a step for performing a thermal process on the gate structure; and a step for forming a metal wiring on the top of the substrate. The substrate comprises the silicon. The gate structure is formed by successively laminating a gate insulation pattern(112), one or more gate electrode(114) and a gate mask(116). The gate insulation pattern comprises the silicon oxide. The thermal process is performed under the gas atmosphere including the hydrogen. The metal wiring is made of copper.